Investigating of SER in 28 nm FDSOI-Planar and Comparing with SER in Bulk-FinFET

Autor:	Seungbae Lee, Taiki Uemura, Hai Jiang, Tae-Young Jeong, Sangwoo Pae, Hwa-Sung Rhee, Shota Ohnishi, Ki-il Hong, Byungjin Chung, Yongsung Ji, Jeongmin Jo, Eun-Cheol Lee, Park Young-In, Jaehee Choi, Rakesh Ranjan, Ken Machida
Rok vydání:	2020
Předmět:	010302 applied physics Physics Proton 010308 nuclear & particles physics 01 natural sciences Molecular physics Alpha (programming language) Planar Soft error 0103 physical sciences Neutron Irradiation AND gate Electronic circuit
Zdroj:	IRPS
DOI:	10.1109/irps45951.2020.9129644
Popis:	This paper investigates soft error in memories and logic circuits in 28 nm planar-FDSOI technology by neutron, alpha, proton, and gamma-ray irradiation tests, and compares with SER in bulk-FinFET. The comparison elucidates the different SER trends between planar-FDSOI and bulk-FinFET.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d281594f5ded80b7ed2436e03973bd61 https://doi.org/10.1109/irps45951.2020.9129644 Zobrazit plný text záznamu