| Autor: |
V. O. Zozulia, K. H. Prykhodko, O. V. Botsula |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
2019 IEEE 2nd Ukraine Conference on Electrical and Computer Engineering (UKRCON). |
| DOI: |
10.1109/ukrcon.2019.8879884 |
| Popis: |
Diodes with lateral $n^{+}-n$-border have been proposed as wide-band and high frequency active elements in long part of the terahertz range. They represent planar two-terminal $n^{+}-n-n^{+}-$GaAs-based structures containing a lateral active border as a $n^{+}-n-$ layer connected to the anode contact. 2-D model of electron movement in the device is considered. The analysis of the diodes operation has been performed using ensemble Monte Carlo technique. The diode characteristics are investigated due to the diode’s parameters $(n^{+}-n-$ border position and material doping). The results demonstrate the high frequency generation up to and beyond 300 GHz. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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