An analytical model of power bipolar transistor for circuit simulation

Autor:	B. Fatemizadeh, P.O. Lauritzen
Rok vydání:	2002
Předmět:	Materials science Displacement current business.industry Heterostructure-emitter bipolar transistor Power electronics Bipolar junction transistor Electrical engineering Electronic engineering Conductivity business Voltage Power (physics) Common emitter
Zdroj:	5th IEEE Workshop on Computers in Power Electronics.
DOI:	10.1109/cipe.1996.612348
Popis:	This paper presents a new bipolar junction transistor (BJT) modeling approach using an analytical method which provides sufficient accuracy for most power electronics applications with fast simulation times. This new analytical model includes all important physical effects: recombination in base and emitter; high injection; collector conductivity modulation; quasi-saturation; carrier velocity saturation; and displacement current.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d2757ee4bdc965c275d46dbaef7d611e https://doi.org/10.1109/cipe.1996.612348 Zobrazit plný text záznamu