Electrical and Optical Properties of 8–12μm GaAs/AlGaAs Quantum Well Infrared Photodetectors in 256 x 256 Focal Plane Arrays
| Autor: | Robert Rehm, K. Schwarz, Johann Ziegler, Guido Becker, Martin Walther, Joachim Fleißner, Harald Schneider, J. Braunstein, Clemens Schönbein, Frank Fuchs, Peter Koidl, Wilfried Pletschen, Gerald Bihlmann |
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| Rok vydání: | 1998 |
| Předmět: |
Materials science
Silicon Physics::Instrumentation and Detectors business.industry Photoconductivity Detector Computer Science::Software Engineering chemistry.chemical_element Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Electrical contacts Responsivity chemistry Optoelectronics business Quantum well infrared photodetector Quantum well Dark current |
| Zdroj: | Intersubband Transitions in Quantum Wells: Physics and Devices ISBN: 9780792381648 |
| DOI: | 10.1007/978-1-4615-5759-3_31 |
| Popis: | Optical and electrical properties of photoconductive GaAs/AlGaAs quantum well intersubband detectors in 256 x 256 focal plane arrays (FPAs) for thermal imaging in the 8–12 μm range have been investigated. In order to determine responsivity, dark current and uniformity of individual detector elements in a FPA arrangement, 256 x 256 FPA detector chips have been flip-chip bonded to silicon fan-out structures. The fan-out structures provide electrical contact to 100 pixels in the FPA and allow optical and electrical characterization of single pixel elements in a FPA. |
| Databáze: | OpenAIRE |
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