| Popis: |
Our paper studies the influence of the irradiation by fast electrons on the characteristic properties and microscopic parameters of certain MOSFET transistors with p-induced channel (ROS05). Using the experimental data, an appropriate theoretic model and an optimization method, the following specific parameters were computed for the irradiated and un-irradiated samples: the electron mobility, the Fermi energy value, as well as the saturation voltage and the changing of the drain channel length. |
