Conversion of a plasma enhanced chemical vapor deposited silicon–carbon–nitride thin film at ultra-low temperature by oxygen plasma
| Autor: | Jaime A. Quintero, Yi Wei, Steven M. Smith, Diana Convey, Tim Tighe |
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| Rok vydání: | 2008 |
| Předmět: |
Chemical transformation
Materials science Silicon Metals and Alloys Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Substrate (electronics) Combustion chemical vapor deposition Surfaces Coatings and Films Electronic Optical and Magnetic Materials Amorphous solid chemistry.chemical_compound chemistry Plasma-enhanced chemical vapor deposition Materials Chemistry Thin film Carbon nitride |
| Zdroj: | Thin Solid Films. 516:885-890 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2007.04.153 |
| Popis: | In this work we present an ultra-low temperature method for the oxidation of an amorphous silicon–carbide–nitride (SiCN) material. The SiCN is deposited on silicon substrates by plasma enhanced chemical vapor deposition using CH 4 , SiH 4 , and N 2 chemistry. The physical and chemical properties are characterized for the as-deposited SiCN and post-oxidized films are discussed. The SiCN film is exposed to oxygen plasma, where it undergoes a chemical transformation into a binary SiO 2 material system. A 1.7 nm/min oxidation rate is typical for this process and compares favorably to oxidation methods utilizing much higher temperatures. The substrate temperature remains extremely low throughout the oxidation process, T s 2 . We discuss applications specifically targeted to the conversion of SiCN to SiO 2 . |
| Databáze: | OpenAIRE |
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