Nanostructures of Cu, Au and In on the Silicon Single Crystal Surfaces at their Thermal Deposition
| Autor: | Viktor A. Artemyuk, L. I. Karbivska, Volodymyr L. Karbivskii, P. O. Tesel’ko, Anastas A. Romansky, Olena Ya. Kuznetsova |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
Silicon chemistry.chemical_element 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Copper 0104 chemical sciences law.invention Condensed Matter::Materials Science Scanning probe microscopy chemistry Chemical physics law Monolayer Scanning tunneling microscope 0210 nano-technology Single crystal Deposition (law) Indium |
| Zdroj: | 2019 IEEE 39th International Conference on Electronics and Nanotechnology (ELNANO). |
| DOI: | 10.1109/elnano.2019.8783939 |
| Popis: | Formation of gold, copper and indium surface nanorelief in their thermal evaporation on the silicon single crystal surface (the (111) and (110) planes) is investigated using the methods of high-vacuum scanning probe microscopy and spectroscopy with atomic resolution. The main stages of morphological transformation depending on the parameters of deposition are established. The initial stage of the formation of copper nanostructures as well as gold ones has a fractal character. The growth mechanism consists in the formation of conglomerates of nanoparticles with their subsequent transformation into ellipsoidal particles, after which the formation of nanocrystals occurs. The next link in such a chain of transformations is the formation of crystallographic planes. Revealed features of the nanorelief transformation are associated with the size effect. Found that in the case of Si (111) copper and gold form self-ordered hexagonal-pyramidal nanostructures, which consist of atomic growth steps. Growth of the next step begins at 3 nm from the edge of plane. The processes of formation of the electronic structure of copper and gold are caused by an increase in the density of electronic states at the edge of each monoatomic plane. In view of this, growth of each next plane begins not from the edge, but from the specified distance from the edge, which is more energetically favorable. The process of transformation of the density of electronic states curve of In in the region of occupied and unoccupied states (from 2 to -2 eV) is investigated using the methods of tunneling spectroscopy. For the Si (110) plane, only monolayer hexagonal formations of copper and gold are characteristic. In studying the processes of In deposition on Si (111) and (110) surfaces, cluster conservatism and bunches of clusters formation is observed. |
| Databáze: | OpenAIRE |
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