Photopleochroism of oxide-p-InSe diode structures

Autor:	V. N. Katerinchuk, M. Z. Kovalyuk
Rok vydání:	1997
Předmět:	Thermal oxidation Materials science Physics and Astronomy (miscellaneous) business.industry Oxide Photodetector Heterojunction Substrate (electronics) Photodiode law.invention Crystal chemistry.chemical_compound chemistry law Optoelectronics business Diode
Zdroj:	Technical Physics Letters. 23:377-377
ISSN:	1090-6533 1063-7850
DOI:	10.1134/1.1261674
Popis:	A layered InSe crystal is used to fabricate a polarimetric photodetector. The heterostructure is formed in the plane perpendicular to the cleavage plane of the layers by thermal oxidation of the crystal substrate. The coefficient of photopleochroism of the oxide-p-InSe photodiode for 0.6328 nm light is 90%.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d21dc5698b5926065f15738c2fcd605b https://doi.org/10.1134/1.1261674 Zobrazit plný text záznamu Plný text ve formátu PDF