Speckle in coherent x-ray reflectivity from Si(111) wafers
Autor: | Ian K. Robinson, Ron Pindak, Dierker Sb, J. L. Libbert |
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Rok vydání: | 1997 |
Předmět: | |
Zdroj: | Physical Review B. 56:6454-6457 |
ISSN: | 1095-3795 0163-1829 |
DOI: | 10.1103/physrevb.56.6454 |
Popis: | We report the observation of x-ray speckle in the reflected beam from Si(111) wafers illuminated at grazing incidence. An intense coherent 8-keV x-ray beam was prepared using a wiggler source and multilayer monochromator optics. We demonstrate that the speckle patterns are specific to the region of the sample that is illuminated. From the trade-off between surface sensitivity and signal as a function of perpendicular momentum transfer, we infer that the speckle is due to the surface morphology on a micrometer length scale. We document and explain the evolution of the speckle patterns from nearly specular at low ${q}_{z}$ to highly structured at larger ${q}_{z}.$ |
Databáze: | OpenAIRE |
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