Low Threshold High-Power Room-Temperature Continuous-Wave Operation Diode Laser Emitting at 2.26$muhboxm$
| Autor: | Abdelmajid Salhi, Carlo Sirtori, A. Perona, C. Alibert, Xavier Marcadet, Yves Rouillard, Michel Garcia |
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| Rok vydání: | 2004 |
| Předmět: |
Thermoelectric cooling
Materials science chemistry.chemical_element 02 engineering and technology 01 natural sciences 7. Clean energy law.invention Semiconductor laser theory law 0103 physical sciences Thermoelectric effect Electrical and Electronic Engineering Diode 010302 applied physics business.industry 021001 nanoscience & nanotechnology Laser Copper Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials chemistry Optoelectronics Continuous wave Quantum efficiency 0210 nano-technology business |
| Zdroj: | IEEE Photonics Technology Letters. 16:1253-1255 |
| ISSN: | 1041-1135 |
| Popis: | Diode lasers emitting at 2.26 /spl mu/m, based on the InGaAsSb-AlGaAsSb materials system, are reported. These devices exhibit high internal quantum efficiency of 78% and low threshold current density of 184.5 A/cm/sup 2/ for a 2-mm-long cavity. Output power up to 700 mW (/spl ap/550 mW) has been obtained at 280 K (300 K) in continuous-wave operation with 100 /spl mu/m/spl times/1 mm lasers. These devices have been coated with an antireflection on the output facet and are mounted epilayer down on a copper block. The working temperature was maintained by a thermoelectric Peltier cooling element. |
| Databáze: | OpenAIRE |
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