InSb thin films grown on GaAs substrate and their magneto-resistance effect

Autor:	Atsushi Okamoto, Arata Ashihara, Takayuki Akaogi, Ichiro Shibasaki
Rok vydání:	2001
Předmět:	Electron mobility Materials science Magnetoresistance business.industry Doping Mineralogy Substrate (electronics) Condensed Matter Physics Inorganic Chemistry Electrical resistivity and conductivity Impurity Materials Chemistry Optoelectronics Thin film business Molecular beam epitaxy
Zdroj:	Journal of Crystal Growth. :619-624
ISSN:	0022-0248
DOI:	10.1016/s0022-0248(01)00784-9
Popis:	InSb thin films were grown on GaAs (1 0 0) substrates by molecular beam epitaxy (MBE). N-type impurity (Sn and Si) doping of InSb was investigated for the purpose of reducing its temperature dependence of resistivity. It was found that stable Sn-doped InSb thin films with large electron mobility (4.5×10 4 cm 2 /V s) and sheet electron concentration (7.2×10 12 cm −2 ) can be fabricated. Magneto-resistance (MR) devices using these films show a large enough MR effect and an extremely small temperature dependence of resistance.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d21ae1845ae440a932c4878b65822062 https://doi.org/10.1016/s0022-0248(01)00784-9 Zobrazit plný text záznamu Full Text from ScienceDirect