Process Integration of Low-Power and High-Speed 16Mb MRAM using Multi-Layer Wiring Technology

Autor:	Yoshiaki Asao, Norikazu Ohshima, Masahisa Yoshikawa, Hisanori Aikawa, Shuichi Tahara, T. Ueda, Keiji Hosotani, Takeshi Kajiyama, S. Miura, Tatsuya Kishi, K. Tsuchida, Sumio Ikegawa, Naoharu Shimomura, Hiroaki Yoda, Hiromitsu Hada, Masayoshi Iwayama, Minoru Amano, Akihiro Nitayama
Rok vydání:	2006
Předmět:	Magnetoresistive random-access memory Materials science business.industry Process integration Electrical engineering business Multi layer Power (physics)
Zdroj:	Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials.
DOI:	10.7567/ssdm.2006.f-8-1
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d21413e5f0c4bbe45223a57de5c469df https://doi.org/10.7567/ssdm.2006.f-8-1 Zobrazit plný text záznamu