Arsenic p-Doping of HgCdTe Grown by Molecular Beam Epitaxy (MBE): A Solved Problem?
| Autor: | Christoph H. Grein, Sivalingam Sivananthan, James W. Garland |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Solid-state physics business.industry Doping Carrier lifetime Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials Auger chemistry.chemical_compound chemistry Materials Chemistry Optoelectronics Mercury cadmium telluride Electrical and Electronic Engineering business Molecular beam Molecular beam epitaxy |
| Zdroj: | Journal of Electronic Materials. 42:3331-3336 |
| ISSN: | 1543-186X 0361-5235 |
| Popis: | The goal of achieving well-controlled, reproducibly p-doped mercury cadmium telluride (HgCdTe) with sharp p–n junctions and low Shockley–Read–Hall contribution τ SRH to the minority carrier lifetime τ has been pursued for the past 30 years by the HgCdTe molecular beam epitaxial (MBE) growth community, but remains elusive. On the other hand, n-doping with In avoids the short τ SRH characteristic of arsenic-doped MBE-grown HgCdTe and is well controlled, stable, and reproducibly 100% activated as-grown. However, as discussed herein, because of inherent limitations of n-doped absorber layers, overcoming the challenges of successfully p-doping HgCdTe remains an important problem, especially for long-wavelength infrared detectors. We briefly review the achievements that have been made in p-doping HgCdTe, point out the reasons why achieving well-controlled, reproducibly p-doped MBE-grown HgCdTe with a lifetime τ not limited by τ SRH remains a very important task, discuss the probable origin of the short τ SRH in MBE-grown HgCdTe, and discuss possible ways to achieve much longer values of τ SRH in MBE-grown p-doped HgCdTe. |
| Databáze: | OpenAIRE |
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