MBE growth and characterization of magnesium-doped gallium nitride
| Autor: | S N Novikov, L.B Flannery, C. T. Foxon, J.W. Orton, Ian Harrison, A. V. Andrianov, D.E. Lacklison, Tin S. Cheng, B. Ya. Ber, Yu.A. Kudriavtsev, S. E. Hooper, D J Dewsnip |
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| Rok vydání: | 1998 |
| Předmět: |
Materials science
Photoluminescence Band gap Exciton Doping Analytical chemistry Gallium nitride Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Materials Chemistry Electrical and Electronic Engineering Thin film Luminescence Molecular beam epitaxy |
| Zdroj: | Semiconductor Science and Technology. 13:927-935 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/13/8/018 |
| Popis: | We describe measurements of the electrical and luminescence properties of Mg-doped GaN films grown by plasma-enhanced molecular beam epitaxy on sapphire and GaAs substrates. Secondary ion mass spectroscopy measurements were used to determine the total Mg concentration in each of the films and showed the Mg profiles to be flat throughout the films. At low Mg beam fluxes, there is a linear relationship between the Mg concentration in the film [Mg] and the Mg flux but, for fluxes above about , [Mg] saturates at (at a growth temperature of C). We outline a simple model of Mg incorporation which explains the experimental data. Hall effect measurements reveal that p-type conductivity is obtained only in films grown under slightly nitrogen-rich conditions and demonstrate that, in thin films , conductivity is dominated by high densities of donor-type defects. This is also borne out by photoluminescence (PL) results. Most of the samples showed bound exciton emission at low temperatures, in some cases involving neutral donors, in others neutral acceptors, the emission suggesting that the incorporation of Mg results in a lowering of the GaN band gap. All samples show donor-acceptor recombination and detailed analysis suggests that Mg doping suffers from self-compensation. Room-temperature PL is dominated by a free electron-bound hole emission line at 3.2 eV in p-type samples but by deep emission in samples grown under Ga-rich conditions. |
| Databáze: | OpenAIRE |
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