Thermal heating within SOI
| Autor: | J.H.J. Janssen, J.J. Koning, S. Lecaudey, E. Spaan, M. Stoutjesdijk |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Engineering
business.industry Geothermal heating Transistor Electrical engineering Time constant Silicon on insulator Condensed Matter Physics Atomic and Molecular Physics and Optics Die (integrated circuit) Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Power (physics) law Thermal Optoelectronics Power semiconductor device Electrical and Electronic Engineering Safety Risk Reliability and Quality business |
| Zdroj: | Microelectronics Reliability. 48:1505-1508 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/j.microrel.2008.07.057 |
| Popis: | Heat diffuses from hot power devices to neighboring components such as bondpads, which shortens the lifetime of bond balls. SOI is a technology with advantages for integrated power applications. For this reason heat transport between components within one SOI die has been measured experimentally. The thermal time constants are determined. Inside an SOI transistor the heat propagates with 1 μm/μs typically until other time constants take over. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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