Electric field‐induced negative photoconductivity in GaAs

Autor:	Cynthia M. Hanson, H.H. Wieder, Rainer Zuleeg
Rok vydání:	1986
Předmět:	chemistry.chemical_classification Condensed Matter::Materials Science Ion implantation chemistry Solid-state physics Band gap Photoconductivity Electric field General Physics and Astronomy Trapping Atomic physics Electrostatic induction Inorganic compound
Zdroj:	Journal of Applied Physics. 59:3911-3913
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.336735
Popis:	High‐field negative photoconductivity observed below the fundamental band gap of GaAs is attributed to the electric field‐dependent capture cross section of an electron donor level located at 1.2 eV relative to the valence‐band edge and to a dynamic balance between emission, trapping, and recombination of optically induced charge carriers.
Databáze:	OpenAIRE
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