Defect characterization of etch pits in ZnSe based epitaxial layers
| Autor: | K. K. Law, T. J. Miller, Kevin W. Haberern, G. Meis‐Haugen, G. D. U’Ren, Mark S. Goorsky |
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| Rok vydání: | 1996 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) business.industry Scanning electron microscope technology industry and agriculture Stacking Epitaxy Dark field microscopy Crystallographic defect Crystallography Etch pit density Transmission electron microscopy Optoelectronics business Stacking fault |
| Zdroj: | Applied Physics Letters. 69:1089-1091 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.117067 |
| Popis: | Three distinct etch pit features in ZnSe based epitaxial layers have been identified. The features were observed with optical dark field microscopy and confirmed to be pits using scanning electron microscopy. Using transmission electron microscopy, we associated different etch pits with characteristic crystallographic defects which are common in epitaxially grown II–VI materials. Frank‐type stacking faults form the largest etch pit followed by a paired configuration of Shockley‐ type stacking faults. The smallest etch pit is due to a single Shockley‐type stacking fault. This study represents one of the first examples of identifying crystallographic defects in II–VI wide bandgap materials using etch pit delineation. |
| Databáze: | OpenAIRE |
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