Nondestructive technique to measure bulk lifetime and surface recombination velocities at the two surfaces by infrared absorption due to pulsed optical excitation

Autor:	G. S. Kousik, P. K. Ajmera, Z. G. Ling
Rok vydání:	1992
Předmět:	business.industry Infrared Chemistry General Physics and Astronomy Infrared spectroscopy Semiconductor device Electron Molecular physics Optics Excited state Wafer Absorption (electromagnetic radiation) business Excitation
Zdroj:	Journal of Applied Physics. 72:141-146
ISSN:	1089-7550 0021-8979
Popis:	The modeling and analysis of electron devices including photovoltaic devices requires the knowledge of the surface recombination velocities at the two surfaces of the wafer along with the bulk lifetime. In this paper, the work of Luke and Cheng [J. Appl. Phys. 61, 2282 (1987)] is extended to account for the asymmetric case of different surface recombination velocities at the two wafer surfaces. We present the analysis and discuss experimental procedures to extract the above three parameters. The contactless measurement technique is based on the transient behavior of infrared absorption due to the decay of optically excited excess carriers. In order to determine the surface recombination velocities at both surfaces, the measurements must be made with each side acting as the front surface. An example of parameter extraction is presented.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d1df334f4002cb6b8505777166ea46a9 https://doi.org/10.1063/1.352174 Zobrazit plný text záznamu