Investigation of thermal runaway of reverse-biased silicon carbide schottky barrier diode
| Autor: | Yuichiro Nanen, M. Nakagawa, Masatoshi Aketa, Takashi Nakamura, S. Mori, Hirokazu Asahara |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Silicon Thermal runaway business.industry 020208 electrical & electronic engineering chemistry.chemical_element Schottky diode 02 engineering and technology 01 natural sciences chemistry.chemical_compound chemistry 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Silicon carbide Electronic engineering Optoelectronics Thermal stability business |
| Zdroj: | 2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK). |
| Popis: | SiC devices are expected to operate at much higher temperature than Si devices. However, commercially available SiC devices are limited to the temperature almost same as Si devices. In order to operate SiC devices at high temperature, it is necessary to improve package technology and to design SiC devices properly for high temperature. In this study, robustness against thermal runaway of SiC-SBD is evaluated. SiC-SBD with a heat-sink is thermally stable, and can operate even at T a = 250 °C without thermal runaway. |
| Databáze: | OpenAIRE |
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