Large Acoustoelectric Effect in Wafer Bonded Indium Gallium Arsenide / Lithium Niobate Heterostructure Augmented by Novel Gate Control
| Autor: | Matt Eichenfield, Lisa Hackett, James Kenneth Douglas, T. A. Friedmann, Aleem Siddiqui, Michael R. Miller, Gregory M. Peake, Anna Tauke-Pedretti, Daniel Dominguez |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science business.industry Amplifier Lithium niobate Surface acoustic wave Heterojunction 01 natural sciences chemistry.chemical_compound Acousto-electric effect chemistry Stack (abstract data type) 0103 physical sciences Optoelectronics Wafer business Indium gallium arsenide |
| Zdroj: | 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII). |
| Popis: | This paper demonstrates a monolithic surface acoustic wave amplifier fabricated by state-of-the-art heterogenous integration of a IH-V InGaAs-based epitaxial material stack and LiNb03. Due to the superior properties of the materials employed, we observe electron gain and also non-reciprocal gain in excess of 30dB with reduced power consumption. Additionally, we present a framework for performance optimization as a function of material parameters for a targeted gain. This platform enables further advances in active and non-reciprocal piezoelectric acoustic devices. |
| Databáze: | OpenAIRE |
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