Analysis of Data Obtained Using the Thermal-Step Method on a MOS Structure—An Electrostatic Approach
| Autor: | Bernard Rousset, Jean-Louis Sanchez, Alain Toureille, L. Boyer, Petru Notingher, S. Agnel, O. Fruchier |
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| Rok vydání: | 2010 |
| Předmět: |
010302 applied physics
Materials science business.industry 01 natural sciences Capacitance Electric charge Space charge Industrial and Manufacturing Engineering law.invention Amplitude Reliability (semiconductor) Pressure measurement Control and Systems Engineering law 0103 physical sciences Thermal Electronic engineering Data analysis Optoelectronics Electrical and Electronic Engineering 010306 general physics business |
| Zdroj: | IEEE Transactions on Industry Applications. 46:1144-1150 |
| ISSN: | 0093-9994 |
| Popis: | The thermal-step method (TSM) is a nondestructive technique for measuring electric charge, based on the acquisition of a capacitive current appearing when a thermal step of low amplitude is applied to an insulating structure. The electrostatic modeling of a metal-oxide-semiconductor (MOS) structure while crossed by a thermal wave is addressed in this paper, in view of analyzing the data obtained by TSM in conjunction with capacitance-voltage measurements. Applications to MOS samples with 120-nm-thick oxides are presented. |
| Databáze: | OpenAIRE |
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