Growth of polyaniline films on porous silicon layers
| Autor: | E.S. Matveeva, José M. Martínez-Duart, V.P. Parkhutik, R. Diaz Calleja |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
Materials science
Biophysics Infrared spectroscopy General Chemistry Condensed Matter Physics Porous silicon Biochemistry Atomic and Molecular Physics and Optics chemistry.chemical_compound chemistry Polymerization Chemical engineering Polyaniline Polymer chemistry Wafer Cyclic voltammetry Layer (electronics) Deposition (law) |
| Zdroj: | Journal of Luminescence. 57:175-180 |
| ISSN: | 0022-2313 |
| DOI: | 10.1016/0022-2313(93)90128-a |
| Popis: | The electrochemical deposition of electrically active polyaniline films (PANI) onto the surface of porous silicon (PS) layers formed at p- and n-type silicon wafers has been studied using cyclic voltammetry measurements and infrared spectroscopy. The process of PANI deposition is easier on the PS layers formed at n-Si wafers and essentially retarded at PS/p-Si samples, presumably due to a parallel reaction of oxygen evolution. The polymerization reaction starts at the pore bottoms and propagates towards the external surface of the PS layer. Electric conduction of PS/PANI composites is lower than of uncovered PS layers. |
| Databáze: | OpenAIRE |
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