Schematic protection method from influence of total ionization dose effects on threshold voltage of MOS transistors

Autor:	Tigran Harutyunyan, Aristakes Hovsepyan, Vazgen Melikyan
Rok vydání:	2010
Předmět:	Materials science business.industry Transistor Electrical engineering Schematic Hardware_PERFORMANCEANDRELIABILITY Integrated circuit law.invention Threshold voltage law Ionization Logic gate MOSFET Hardware_INTEGRATEDCIRCUITS business Hardware_LOGICDESIGN Electronic circuit
Zdroj:	EWDTS
DOI:	10.1109/ewdts.2010.5742096
Popis:	Modern integrated circuits (IC) operate in environment of various destabilizing factors which have essential influence on the operation of these circuits and often even disturb the normal operation. One of these destabilizing factors is the cosmic radiation, particularly total ionization dose effects (TID). In this paper influence of TID effects on threshold voltages of MOS transistors is discussed. A schematic protection method from these effects is presented.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d1b923f5f899147f933c04fb508eb896 https://doi.org/10.1109/ewdts.2010.5742096 Zobrazit plný text záznamu