Transfer ratio of magnetic tunnel transistors with various Schottky materials

Autor:	Mutsuko Jimbo, Yuji Fujiwara, Tadashi Kobayashi, Takakazu Hirose, Shigeru Shiomi
Rok vydání:	2004
Předmět:	Materials science business.industry Electrical junction Schottky barrier Transistor Metallurgy Schottky diode Condensed Matter Physics Metal–semiconductor junction Electronic Optical and Magnetic Materials law.invention law Optoelectronics business Order of magnitude Voltage Common emitter
Zdroj:	physica status solidi (b). 241:1502-1505
ISSN:	1521-3951 0370-1972
DOI:	10.1002/pssb.200304523
Popis:	The transfer ratio and the magneto-current were investigated for magnetic tunnel transistors with various Schottky materials. In the transistor with a Au/n-Si Schottky junction, a transfer ratio of 0.81 × 10−4 and a magneto–current of 280% were obtained with an emitter voltage of 1.0 V. On the other hand, a transfer ratio of 0.76 × 10−3 and a magneto-current of 110% with an emitter voltage of 1.0 V were obtained in the transistor with a NiFe/n-Si Schottky junction. Thus the transfer ratio of the transistor with NiFe/n-Si Schottky junction was about one order of magnitude larger than that with Au/n-Si junction. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d1b5061ce77ccb0578fa2aaffb373a7c https://doi.org/10.1002/pssb.200304523 Zobrazit plný text záznamu Plný text