Design and performance of a prototype mesa-geometry Ge-on-Si single-photon avalanche diode detector at 1310 nm and 1550 nm wavelengths

Autor:	L. Lever, N.J. Pilgrim, Kevin Gallacher, Phil Allred, Robert W. Kelsall, Gerald S. Buller, David R. Leadley, Ryan E. Warburton, Maksym Myronov, Douglas J. Paul, G. Intermite, Zoran Ikonic
Rok vydání:	2013
Předmět:	Materials science business.industry Detector Physics::Optics Photodetector chemistry.chemical_element Germanium Avalanche photodiode Wavelength Optics chemistry Single-photon avalanche diode Optoelectronics business Noise-equivalent power
Zdroj:	10th International Conference on Group IV Photonics.
DOI:	10.1109/group4.2013.6644406
Popis:	Ge-on-Si single-photon detectors are fabricated and characterized at 1310 and 1550 nm. 4 % single-photon detection efficiency is observed at 1310 nm demonstrating the lowest reported noise equivalent power for Ge-on-Si single-photon detectors (1×10-14 WHz-1/2).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d1b16673fb31557030e99210c28a82f3 https://doi.org/10.1109/group4.2013.6644406 Zobrazit plný text záznamu