Numerical analysis of DAEs from coupled circuit and semiconductor simulation
| Autor: | Monica Selva Soto, Caren Tischendorf |
|---|---|
| Rok vydání: | 2005 |
| Předmět: |
Numerical Analysis
Partial differential equation Discretization Differential equation Applied Mathematics Mathematical analysis Method of lines Finite element method Computational Mathematics Computer Science::Systems and Control Computer Science::Symbolic Computation Differential algebraic equation Numerical stability Mathematics Numerical partial differential equations |
| Zdroj: | Applied Numerical Mathematics. 53:471-488 |
| ISSN: | 0168-9274 |
| DOI: | 10.1016/j.apnum.2004.08.009 |
| Popis: | In this work we are interested in the numerical solution of a coupled model of differential algebraic equations (DAEs) and partial differential equations (PDEs). The DAEs describe the behavior of an electrical circuit that contains semiconductor devices and the partial differential equations constitute drift-diffusion equations modelling the semiconductor devices in the circuit. After space discretization using a finite element method, the coupled system results in a differential-algebraic system with a properly stated leading term. We investigate the structure and the properties of this DAE system. In particular, we develop structural criteria for the DAE index. This is of basic interest since DAE properties like stability, existence and uniqueness of solutions depend strongly on its index. |
| Databáze: | OpenAIRE |
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