Study of Particularities for Metal Contact Formation to the Semiconductor High-Resistance GaAs:Cr
| Autor: | L.S. Okaevich, O.P. Tolbanov, A.D. Lychagin, D.L. Budnitsky |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
business.industry Polarity (physics) Detector Electrical engineering chemistry.chemical_element Gallium arsenide Metal chemistry.chemical_compound Chromium Semiconductor chemistry Electrical resistivity and conductivity visual_art visual_art.visual_art_medium Optoelectronics business Ohmic contact |
| Zdroj: | 2005 Siberian Conference on Control and Communications. |
| Popis: | In the paper, studies of volt-ampere and volt-luxing characteristics of the detector structures based on gallium arsenide, compensated by chromium are carried out. It is shown that metallic contacts to a structure are barrier for electrons. One of contacts is inject at any bias polarity. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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