Low-Power a-Si:H Gate Driver Circuit With Threshold-Voltage-Shift Recovery and Synchronously Controlled Pull-Down Scheme
| Autor: | Mao Hsun Cheng, Chun Da Tu, Chia En Wu, Fu Hsing Chen, Chih-Lung Lin |
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| Rok vydání: | 2015 |
| Předmět: |
Amorphous silicon
Materials science business.industry Transistor Electrical engineering Hardware_PERFORMANCEANDRELIABILITY Electronic Optical and Magnetic Materials Power (physics) law.invention Threshold voltage chemistry.chemical_compound chemistry law Distortion Hardware_INTEGRATEDCIRCUITS Gate driver Waveform Electrical and Electronic Engineering business Hardware_LOGICDESIGN Voltage |
| Zdroj: | IEEE Transactions on Electron Devices. 62:136-142 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2014.2372820 |
| Popis: | This paper presents a new low-power gate driver circuit designed by hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs). An attempt is also made to reduce the power consumption resulting from the high-frequency pulldown structure, in which a pair of 0.25-Hz clock signals is used to implement a low-frequency and synchronously controlled pull-down scheme for recovering the threshold voltage shifts of a-Si:H TFTs under the negative gate-to-source voltage and decreasing the used TFTs. Measurement results indicate that the proposed gate driver circuit consumes 98.7 μW/stage, and the output waveforms are very stable without distortion when the proposed circuit is operated at 100 °C for 840 h. Furthermore, the feasibility of the proposed gate driver circuit is demonstrated for the quad-extended-video-graphics-array resolution. |
| Databáze: | OpenAIRE |
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