Process Variation Study of SELBOX Inverted- T Junctionless FinFET for High-Performance Applications
| Autor: | Sivasankaran K., Rajeev Pankaj Nelapati |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science business.industry Topology (electrical circuits) 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Buried oxide Electronic Optical and Magnetic Materials Threshold voltage Process variation Substrate doping 0103 physical sciences Optoelectronics Inverted t 0210 nano-technology business |
| Zdroj: | Silicon. 12:1699-1706 |
| ISSN: | 1876-9918 1876-990X |
| DOI: | 10.1007/s12633-019-00270-x |
| Popis: | This work investigates the performance of the inverted-T (IT) junctionless (JL) FinFET with selective buried oxide (SELBOX) topology. The electrical characteristics of SELBOX-ITJL FinFET are analyzed and compared with the ITJLFinFET. The performance of the SELBOX-ITJL FinFET is estimated for different SELBOX lengths (LSELBOX), substrate doping, UTB thickness (tsi). SELBOX-ITJL FinFET exhibits better ION, ION/IOFF, SS and DIBL for LSELBOX ≈ gate length (Lg). Unlike ITJL FinFET, substrate doping empowers to engineer the threshold voltage (VTH) of the proposed device. ION of the SELBOX-ITJLFET is improved by 48% and 9% compared to JLFET and ITJLFET respectively. Performance of SELBOX-ITJL FinFET at high temperatures (up to 550 K) is illustrated. The self-heating effect in SELBOX device is also studied and it is observed that the proposed device exhibits better immune to self-heating as compared to ITJL FinFET. Virtual device modeling and extensive device simulations are carried out using Synopsys Sentaurus TCAD tools (sprocess & sdevice). |
| Databáze: | OpenAIRE |
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