Current transport in porous p-Si and Pd-porous Si structures

Autor:	S. V. Slobodchikov, E. V. Russu, Kh. M. Salikhov
Rok vydání:	1998
Předmět:	Photocurrent Condensed matter physics Chemistry Diffusion Relaxation (NMR) Analytical chemistry Atmospheric temperature range Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Magnet Current (fluid) Porosity Diode
Zdroj:	Semiconductors. 32:960-962
ISSN:	1090-6479 1063-7826
DOI:	10.1134/1.1187524
Popis:	Mechanisms are investigated for current transport in porous p-Si and Pd-p-por-Si structures in the temperature range 78–300 K. It is shown that at 78 K drift transport is decisive, with the participation of deep traps with a concentration Nt≈1.3×1013 cm−3. At higher temperatures the diffusion mechanism takes over, with I∼exp(−qV/nkT) and n=10–20. Relaxation processes for the reverse current and photocurrent (ascending branch) have a delayed character (up to t⋍100 s) and are determined by the effect of traps at a depth Et=0.80 eV. The temperature behavior of the photocurrent (without a bias) is connected with recombination at a level Er=0.12 eV, and its value essentially depends on the contribution of the basal region of the diode structure.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d18c6cebd7aaf9503752eb77ffbbaec4 https://doi.org/10.1134/1.1187524 Zobrazit plný text záznamu Plný text ve formátu PDF