Single Microhole per Pixel in CMOS Image Sensors With Enhanced Optical Sensitivity in Near-Infrared
| Autor: | Toshishige Yamada, M. Saif Islam, Ahasan Ahamed, Wayesh Qarony, Ekaterina Ponizovskaya Devine, Aly F. Elrefaie, Ahmed S. Mayet, Shih-Yuan Wang, Soroush Ghandiparsi, Cesar Bartolo-Perez |
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| Rok vydání: | 2021 |
| Předmět: |
Materials science
Pixel Physics::Instrumentation and Detectors business.industry 010401 analytical chemistry 01 natural sciences 0104 chemical sciences Photodiode law.invention Wavelength CMOS law Optoelectronics Sensitivity (control systems) Electrical and Electronic Engineering Image sensor business Absorption (electromagnetic radiation) Optical filter Instrumentation |
| Zdroj: | IEEE Sensors Journal. 21:10556-10562 |
| ISSN: | 2379-9153 1530-437X |
| Popis: | Silicon photodiode-based CMOS sensors with backside-illumination for 300–1100 nm wavelength range were studied. We showed that a single hole in the photodiode increases the optical efficiency of the pixel. In near-infrared wavelengths, the enhancement allows 70% absorption in a $3~\mu \text{m}$ thick Si. It is $4\times $ better than that for the flat pixel. We compared different shapes and sizes of single hole and hole arrays. We have shown that a certain size and shape in single hole-based pixels contribute to stronger enhancement of optical efficiencies. The crosstalk was successfully reduced by employing trenches between pixels. We optimized the dimensions of the trenches to achieve minimal pixel separation for $1.12~\mu \text{m}$ pixels. |
| Databáze: | OpenAIRE |
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