Integration of SiOC air gaps in copper interconnects
| Autor: | Maurice Rivoire, C. Monget, L.G. Gosset, N. Casanova, J. C. Oberlin, M. Broekaart, P. Brun, Joaquim Torres, Vincent Arnal |
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| Rok vydání: | 2003 |
| Předmět: |
Capacitive coupling
Materials science business.industry Copper interconnect Nanotechnology Dielectric Chemical vapor deposition Condensed Matter Physics Capacitance Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Plasma-enhanced chemical vapor deposition Chemical-mechanical planarization Optoelectronics Wafer Electrical and Electronic Engineering business |
| Zdroj: | Microelectronic Engineering. 70:274-279 |
| ISSN: | 0167-9317 |
| Popis: | The formation of air gaps by means of a non-conformal chemical vapor deposition (CVD) on patterned wafers was successfully demonstrated using SiOC (K=2.9) as inter-level metal dielectric. This paper presents the results on physical characterization and electrical performance evaluation of integrated SiOC air gaps in a three-metal level Cu/SiOC interconnect module. The influence of the air gaps shape on parasitic coupling capacitance between copper lines was also discussed in accordance with mask design rules and processing steps. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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