Internally Integrated Active-Type Patch Antenna for Semiconductor Superlattice THz Oscillators
| Autor: | Vishal S. Jagtap, Christophe Minot |
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| Rok vydání: | 2012 |
| Předmět: | |
| Zdroj: | IEEE Transactions on Terahertz Science and Technology. 2:131-136 |
| ISSN: | 2156-3446 2156-342X |
| DOI: | 10.1109/tthz.2011.2177169 |
| Popis: | Semiconductor superlattices are well known to exhibit negative resistance i.e., gain medium like properties at high frequencies. In order to exploit these gain-like properties as an oscillator, one has to compensate very large inductive impedance (Im[Z] ≥ 150 |Re[Z]|). In this paper, we present a novel integrated active-type patch antenna to design the semiconductor superlattice THz oscillators. Within this integrated model, the active source is embedded within a benzocyclobutene dielectric cavity sandwiched between gold metal layers. The metal layer underneath provides THz/DC ground whereas the top metal functions as a radiating antenna simultaneously providing DC bias to the embedded superlattice active source. The design principle is based on satisfying the self-consistent oscillator impedance relationship, along with the efficient radiation of resonating cavity mode. The two oscillator-type active antenna configurations proposed are capable of matching impedance within few ohms of Im[Z] while achieving an antenna gain of >; 5 dBi for a TM10 cavity resonating mode. |
| Databáze: | OpenAIRE |
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