Growth and characterization of cubic CdS epilayers on GaAs substrates
| Autor: | Yong Dae Choi, Hee-Joong Yun, Ki-Seon Lee, Young-Moon Yu, Byungsung O, Changsoo Kim, Pyeong Yeol Yu |
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| Rok vydání: | 2004 |
| Předmět: |
Photoluminescence
Materials science Condensed Matter::Other business.industry Hexagonal phase Wide-bandgap semiconductor Analytical chemistry Surfaces and Interfaces Substrate (electronics) Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Epitaxy Surfaces Coatings and Films Gallium arsenide Condensed Matter::Materials Science chemistry.chemical_compound chemistry Phase (matter) X-ray crystallography Optoelectronics business |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 22:324-327 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.1647597 |
| Popis: | Cubic CdS epilayers were grown on (100) GaAs substrate by hot-wall epitaxy. X-ray diffraction and photoluminescence measurements revealed that the hexagonal phase was dominant in the layers grown at low temperatures, and the cubic phase became dominant with increasing growth temperature. The photoluminescence emission lines in cubic CdS were identified. |
| Databáze: | OpenAIRE |
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