Interface-mediated amorphization of coesite by 200 keV electron irradiation
Autor: | H. S. Xie, W. L. Gong, Rodney C. Ewing, L. M. Wang |
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Rok vydání: | 1997 |
Předmět: | |
Zdroj: | Journal of Applied Physics. 81:2570-2574 |
ISSN: | 1089-7550 0021-8979 |
DOI: | 10.1063/1.363920 |
Popis: | Electron-induced amorphization of coesite was studied as a function of irradiation temperature by in situ transmission electron microscopy at an incident energy of 200 keV. Electron-induced amorphization of coesite is induced by an ionization mechanism and is mainly dominated by an interface-mediated, heterogeneous nucleation-and-growth controlled process. Amorphous domains nucleate at surfaces, crystalline-amorphous (c-a) interfaces, and grain boundaries. This is the same process as the interface-mediated vitrification of coesite by isothermal annealing above the thermodynamic melting temperature (875 K), but below the glass transition temperature (1480 K). The interface-mediated amorphization of coesite by electron irradiation is morphologically similar to interface-mediated thermodynamic melting. |
Databáze: | OpenAIRE |
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