Effects of BCl3 addition to Cl2 gas on etching characteristics of GaN at high temperature
| Autor: | Shigeru Takatsuji, Makoto Sekine, Akira Horikoshi, Shohei Nakamura, Masaru Hori, Soichi Nadahara, Motohiro Kohno, Kazuo Kinose, Kenji Ishikawa, Atsushi Tanide |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Analytical chemistry chemistry.chemical_element Gallium nitride macromolecular substances 02 engineering and technology Substrate (electronics) 01 natural sciences chemistry.chemical_compound stomatognathic system Etching (microfabrication) 0103 physical sciences Materials Chemistry Chlorine Electrical and Electronic Engineering Boron Instrumentation 010302 applied physics Plasma etching Process Chemistry and Technology fungi technology industry and agriculture BCL3 Plasma 021001 nanoscience & nanotechnology Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry 0210 nano-technology |
| Zdroj: | Journal of Vacuum Science & Technology B. 37:021209 |
| ISSN: | 2166-2754 2166-2746 |
| DOI: | 10.1116/1.5082345 |
| Popis: | Gallium nitride films were etched at 400 °C and 20 Pa with a radio-frequency-generated Cl2–BCl3 mixed plasma. While dog-legged profiles were obtained by plasma etching using pure Cl2, straight sidewall shapes were achieved through BCl3 gas addition into the Cl2 plasma by suppressing the plasma-induced damage on the etched surface. Etching by-products containing boron on the etched surface affected the etch rate. Smooth etched profiles were obtained by controlling the redeposition of by-products of boron and chlorine compounds, particularly for substrate temperatures above 230 °C. |
| Databáze: | OpenAIRE |
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