High Substrate-Temperature (450–600°C) Fabrication of CuIn(S,Se)2 Thin Films Using Hybrid Reactive Sputtering/Sulfurization Method

Autor:	Yu-Han Cheng, Kun-Hong Chen, Bae-Heng Tseng, Huey-Liang Hwang
Rok vydání:	2000
Předmět:	Reactive gas Fabrication Materials science Annealing (metallurgy) business.industry Photovoltaic system General Engineering General Physics and Astronomy Sputtering Optoelectronics Thin film business Stoichiometry Deposition (law)
Zdroj:	Japanese Journal of Applied Physics. 39:168
ISSN:	1347-4065 0021-4922
DOI:	10.7567/jjaps.39s1.168
Popis:	CuInSe2, CuInS2, CuGaSe2, CuGaS2 and their multinary alloys are promising for applications in photovoltaic devices. The fabrication of I-III-IV2 thin films beyond the conventional multi-source deposition have become extremely demanding for the large scale solar modules development. Reactive sputtering and sulfurization are among the best choices that have many intrinsic advantages for very large-areas. In this work, the depositions of CuIn(S,Se)2 thin films were carried out by hybrid sputtering/sulfurization method with Culn and CuInSe2 targets and the reactive gas, H2S. The characterization results show that a nearly stoichiometric CuInSe2 thin film could be obtained with or without a post H2S annealing. The Se/S ratio of CuIn(S,Se)2 thin films could be controlled with the different growth conditions. It shows that this hybrid method could be a feasible method to fabricate the large-area I-III-VI2 based high efficiency solar cells.
Databáze:	OpenAIRE
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