Highly Sensitive Electron-Beam Negative Resists Utilizing Phenylcarbinol as Dissolution-Inhibitor Precursor

Autor:	Hiroshi Shiraishi, Takumi Ueno, Michiaki Hashimoto, Sonoko Migitaka, Shou-ichi Uchino, Jiro Yamamoto, Kyoko Kojima
Rok vydání:	1996
Předmět:	Materials science Polymers and Plastics Organic Chemistry Analytical chemistry chemistry.chemical_compound Phenylcarbinol chemistry Resist Materials Chemistry Cathode ray Benzene Lithography Dissolution Trifluoromethanesulfonate Electron-beam lithography
Zdroj:	Journal of Photopolymer Science and Technology. 9:685-691
ISSN:	1349-6336 0914-9244
DOI:	10.2494/photopolymer.9.685
Popis:	Chemically amplified negative resists made by utilizing the polarity-change reaction of phenylcarbinol were investigated for electron beam lithography. The resist composed of 1, 3-bis(α-hydroxyisopropyl)benzene (Diol-1), m/p-cresol novolak resin, and diphenyliodonium trifluoromethanesulfonate (DITf) showed the best lithographic performance in terms of sensitivity and contrast among the resists using phenylcarbinol. Fine 0.25-μm line-and-space patterns were formed by using this Diol-1 resist with a dose of 3.6 μC/cm2 in conjunction with a 50-kV electron beam exposure system.
Databáze:	OpenAIRE
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