Operation Voltage Dependence of Memory Cell Characteristics in Fully Depleted Floating-Body Cell
| Autor: | Takashi Ohsawa, K. Inoh, Mutsuo Morikado, Tomoaki Shino, Akihiro Nitayama, Takeshi Hamamoto, Naoki Kusunoki, Katsuyuki Fujita, Hiroomi Nakajima, Tomoki Higashi, Yoshihiro Minami |
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| Rok vydání: | 2005 |
| Předmět: |
Physics
business.industry Electrical engineering Silicon on insulator Hardware_PERFORMANCEANDRELIABILITY Integrated circuit Overdrive voltage Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Topology Electronic Optical and Magnetic Materials law.invention Threshold voltage law Overvoltage Memory cell MOSFET Hardware_INTEGRATEDCIRCUITS Electrical and Electronic Engineering business Voltage |
| Zdroj: | IEEE Transactions on Electron Devices. 52:2220-2226 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/ted.2005.856808 |
| Popis: | A one-transistor memory cell on silicon-on-insulator, called floating-body cell (FBC), has been developed and demonstrated. Threshold voltage difference between the "0"-state and the "1"-state, which is a key parameter for realizing a large-scale memory by FBCs, is measured and analyzed using a 96 kb array diagnostic monitor (ADM). A function test of the ADM yielded a fail-bit probability of 0.002%. A new metric relating to the fail-bit probability, that is, the ratio of the threshold voltage difference over the total threshold voltage variation, is introduced and applied to the measurement results. Read current distributions are also evaluated for various operation voltages. This paper also investigates substrate bias dependence of the threshold voltage unique to fully-depleted devices. Channel impurity and substrate impurity concentration dependence of the threshold voltage are analyzed based on experimental data and device simulation. |
| Databáze: | OpenAIRE |
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