Investigation of Mg Doping Profile in the p-Cladding Layer for High-Brightness AlGaInP-Based Light Emitting Diodes

Autor:	Ho Soung Ryu, Joon Mo Park, Jong Hyeob Baek, Hwa Sub Oh, Young-Jin Kim, Joon Seop Kwak, In Kyu Jang, Ji Hoon Park, Hyung Joo Lee
Rok vydání:	2014
Předmět:	Brightness Materials science business.industry Doping Biomedical Engineering Bioengineering General Chemistry Condensed Matter Physics Cladding (fiber optics) law.invention law Optoelectronics General Materials Science Quantum efficiency business Diode Light-emitting diode Doping profile
Zdroj:	Journal of Nanoscience and Nanotechnology. 14:6124-6127
ISSN:	1533-4899 1533-4880
DOI:	10.1166/jnn.2014.8320
Popis:	We investigated 590 nm light-emitting diodes appropriate for full-color display applications in terms of their electrical and optical behaviors during operation according to their Mg doping profile in the p-cladding layer. As the hole concentration in the "b" zone of the p-cladding layer is increased from 3.4 x 10(17) to 6.7 x 10(17), the light output power increases by 41% due to the enhancement of the hole injection into the active region and also due to the minimization of the carrier overflow problem. However, at an oversaturation of Mg doping with excess [Cp2Mg]/[III] in the "b" zone, the internal quantum efficiency degrades because of the decrease in hole concentration because of the oversaturated material problem.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d15e4ab14e54f59880c651873d2723a3 https://doi.org/10.1166/jnn.2014.8320 Zobrazit plný text záznamu