The Rich Dynamics of Memristive Devices With Non-Separable Nonlinear Response
Autor: | Yuriy V. Pershin, Alexey Mikhaylov, Davud V. Guseinov |
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Rok vydání: | 2022 |
Předmět: | |
Zdroj: | IEEE Transactions on Circuits and Systems II: Express Briefs. 69:1802-1806 |
ISSN: | 1558-3791 1549-7747 |
Popis: | In this paper, we classify the instantaneous response of resistors with memory into three types: linear (L), separable nonlinear (SN), and non-separable nonlinear (NSN). A particular model of an NSN-type memristive device is introduced and used to demonstrate the possibility of rich dynamics in the memristor-capacitor circuit subjected to a sinusoidal voltage. In particular, our numerical simulations reveal the regimes of double period oscillations, multiple period oscillations, and chaotic oscillations. The comparison with L-type and SN-type memristive devices described by the same differential state equation indicates the importance of the NSN-type response to achieve such complex dynamics in the memristor-capacitor circuit with a first-order memristive device. Moreover, we demonstrate that a compound NSN-type memristive device can be assembled using one L-type memristive device, two resistors, and two diodes. The complex behavior of such compound devices is verified using SPICE modeling. |
Databáze: | OpenAIRE |
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