Films based on phases in a Si–C–N system. Part II. plasma chemical synthesis of SiC x N y :Н films from the mixture of bis(trimethylsilyl)ethylamine and hydrogen
Autor: | Marina Kosinova, Yu. M. Rumyantsev, I. V. Yushina |
---|---|
Rok vydání: | 2017 |
Předmět: |
010302 applied physics
Materials science Trimethylsilyl Energy-dispersive X-ray spectroscopy Analytical chemistry 02 engineering and technology Chemical vapor deposition 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences chemistry.chemical_compound Carbon film chemistry Ellipsometry Plasma-enhanced chemical vapor deposition 0103 physical sciences Materials Chemistry Ceramics and Composites Thin film Ethylamine 0210 nano-technology |
Zdroj: | Glass Physics and Chemistry. 43:48-52 |
ISSN: | 1608-313X 1087-6596 |
Popis: | Thin silicon carbonitride SiCxNy films are synthesized by means of plasma enhanced chemical vapor deposition using an organosilicon compound such as bis(trimethylsilyl)ethylamine EtN(SiMe3)2 as the precursor in a mixture with hydrogen. The chemical composition and properties of the films are characterized by a set of modern research methods such as IR, Raman, and energy dispersive spectroscopy; ellipsometry; scanning electron microscopy; and spectrophotometry. The growth rate, chemical composition, and optical properties of the films have been studied depending on the synthesis temperature in the range from 373 to 1073 K. It is found that the substrate temperature exerts a significant effect on the growth kinetics, surface morphology, physicochemical properties, and functional characteristics of the films. Low temperature SiCxNy films have high transparency in the visible and infrared regions of the spectrum. Varying the parameter of synthesis allows one to obtain layers with different values of the refractive index (1.50–2.50). |
Databáze: | OpenAIRE |
Externí odkaz: |