Simulation and optimization of a tandem solar cell based on InGaN
| Autor: | Zehor Allam, Abdelkader Hamdoune, Chahrazad Boudaoud |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Numerical Analysis
Materials science General Computer Science Computer simulation Applied Mathematics Energy conversion efficiency Photovoltaic system Analytical chemistry chemistry.chemical_element 010103 numerical & computational mathematics 02 engineering and technology 01 natural sciences Layer thickness Theoretical Computer Science chemistry Modeling and Simulation 0202 electrical engineering electronic engineering information engineering 020201 artificial intelligence & image processing 0101 mathematics Indium Tandem solar cell |
| Zdroj: | Mathematics and Computers in Simulation. 167:194-201 |
| ISSN: | 0378-4754 |
| DOI: | 10.1016/j.matcom.2018.09.007 |
| Popis: | The present paper indicates a numerical simulation to optimize the photovoltaic characteristics of an InGaN tandem solar cell. The cell is composed of two sub-cells p-In x Ga 1−x N/i-In x Ga 1−x N/n-In x Ga 1−x N with indium fraction (x) of 0.05 and 0.15, using sun AM1.5 illumination and SILVACO software for the simulation. The results show that there is an increase in the conversion efficiency compared to that of single-junction p-In x Ga 1−x N/i-In x Ga 1−x N/n-In x Ga 1−x N cells. We have also simulated the effect of p-doping in the top-cell, the indium composition, and the intrinsic layer thickness; on the characteristics of the tandem solar cell. We have reached a conversion efficiency of 3.71% for an intrinsic layer thickness of 0.1 μ m and p-doping of 1018 cm−3 in the top cell. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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