Evaluation of the minority carrier diffusion length by means of electron beam induced current and Monte Carlo simulation in AlGaAs and GaAs p-i-n solar cells
| Autor: | D B Holt, Jenny Nelson, C. T. Foxon, E. Grunbaum, Z Barkay, J.S. Roberts, Keith W. J. Barnham, E Napchan |
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| Rok vydání: | 1995 |
| Předmět: |
Scanning electron microscope
business.industry Chemistry Electron beam-induced current Monte Carlo method Electron Condensed Matter Physics Molecular physics Electronic Optical and Magnetic Materials Optics Planar Materials Chemistry Electrical and Electronic Engineering Diffusion (business) Current (fluid) business |
| Zdroj: | Semiconductor Science and Technology. 10:627-633 |
| ISSN: | 1361-6641 0268-1242 |
| Popis: | A new method of determining the minority carrier diffusion length in multilayer solar cells is described. Electron beam-induced current (EBIC) gain measurements, performed in a scanning electron microscope in the planar sample configuration, are compared with values obtained by calculations using a Monte Carlo simulation program of electron trajectories. Values for diffusion lengths obtained by this method from five AlGaAs and GaAs p-i-n and p-n solar cells are compared with values given in the literature. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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