An investigation of various post-RIE cleaning processes for dry etched InP-based HEMTs
| Autor: | Werner Bächtold, H.C. Duran, I. Pfund, Rebecca Cheung, G. Hähner, W. Patrick |
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| Rok vydání: | 1997 |
| Předmět: |
Materials science
Atomic force microscopy business.industry Analytical chemistry High-electron-mobility transistor Electrical devices Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials X-ray photoelectron spectroscopy Etching (microfabrication) Oxygen plasma Optoelectronics Electrical and Electronic Engineering business Microwave |
| Zdroj: | Microelectronic Engineering. 35:67-70 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/s0167-9317(96)00150-5 |
| Popis: | Post-RIE cleaning processes after the dry gate recess etching step of lattice-matched InGaAs/InAlAs/InP-HEMTs using an oxygen plasma treatment of the surface followed by various wet chemical steps have been investigated. The treated surfaces have been analyzed using X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). In addition, the electrical characteristics have been assessed by DC and microwave measurements of HEMT devices. A considerable improvement of the surface quality using post-RIE cleaning has been observed, resulting in better electrical device performance. |
| Databáze: | OpenAIRE |
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