Carrier transport mechanism in La-incorporated high-k dielectric/metal gate stack MOSFETs
| Autor: | In-Shik Han, Hyuk-Min Kwon, Hi-Deok Lee, Byoung Hun Lee, Min-Ki Na, Jung-Deuk Bok, Raj Jammy, Sang-Uk Park, C. Y. Kang, Won-Ho Choi |
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| Rok vydání: | 2011 |
| Předmět: |
business.industry
Chemistry Schottky barrier Schottky effect Analytical chemistry Schottky diode Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Field electron emission Electric field Optoelectronics Electrical and Electronic Engineering Metal gate business Quantum tunnelling High-κ dielectric |
| Zdroj: | Microelectronic Engineering. 88:3399-3403 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2010.04.002 |
| Popis: | In this paper, carrier transport mechanism of MOSFETs with HfLaSiON was analyzed. It was shown that gate current is consisted of Schottky emission, Frenkel-Poole (F-P) emission and Fowler-Nordheim (F-N) tunneling components. Schottky barrier height is calculated to be 0.829eV from Schottky emission model. Fowler-Nordheim tunneling barrier height was 0.941eV at high electric field regions and the trap energy level extracted using Frenkel-Poole emission model was 0.907eV. From the deviation of weak temperature dependence for gate leakage current at low electric field region, TAT mechanism is also considered. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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