Electrical and Temperature Behavior of the Forward DC Resistance With Potential Induced Degradation of the Shunting Type in Crystalline Silicon Photovoltaic Cells and Modules
| Autor: | Michalis Florides, George Makrides, George E. Georghiou |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science Photovoltaic system PID controller 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Potential induced degradation 01 natural sciences Temperature measurement Electronic Optical and Magnetic Materials Reliability (semiconductor) Control theory 0103 physical sciences Degradation (geology) Crystalline silicon Electrical and Electronic Engineering 0210 nano-technology Temperature coefficient |
| Zdroj: | IEEE Journal of Photovoltaics. 11:16-25 |
| ISSN: | 2156-3403 2156-3381 |
| Popis: | Potential-induced degradation (PID) is an unsolved and major power degradation mechanism that affects photovoltaic (PV) cells, and the tendency to increase the operating voltage of PV systems will render it worse, affecting their reliability. A method, which can detect PID at an early stage, can alleviate reliability issues, safeguarding high energy output. The measurement of the forward dc resistance (FDCR) provides promising results for the early PID detection ( |
| Databáze: | OpenAIRE |
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