Increasing Saturated Electron-Drift Velocity in Donor–Acceptor Doped pHEMT Heterostructures
| Autor: | A. K. Bakarov, E. V. Erofeev, K. S. Zhuravlev, D. V. Gulyaev, A. I. Toropov, D. Yu. Protasov |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Drift velocity Materials science Physics and Astronomy (miscellaneous) Doping Heterojunction 02 engineering and technology High-electron-mobility transistor Electroluminescence 021001 nanoscience & nanotechnology 01 natural sciences Acceptor Molecular physics Spectral line Electric field 0103 physical sciences 0210 nano-technology |
| Zdroj: | Technical Physics Letters. 44:260-262 |
| ISSN: | 1090-6533 1063-7850 |
| Popis: | Field dependences of the electron-drift velocity in typical pseudomorphic high-electron-mobility transistor (pHEMT) heteroepitaxial structures (HESs) and in those with donor–acceptor doped (DApHEMT) heterostructures with quantum-well (QW) depth increased by 0.8–0.9 eV with the aid of acceptor layers have been studied by a pulsed technique. It is established that the saturated electron-drift velocity in DA-pHEMT-HESs is 1.2–1.3 times greater than that in the usual pHEMT-HESs. The electroluminescence (EL) spectra of DA-pHEMT-HESs do not contain emission bands related to the recombination in widebandgap layers (QW barriers). The EL intensity in these HESs is not saturated with increasing electric field. This is indicative of a suppressed real-space transfer of hot electrons from QW to barrier layers, which accounts for the observed increase in the saturated electron-drift velocity. |
| Databáze: | OpenAIRE |
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