Highly reliable enhanced nitride interface process of barrier low-k using ultra-thin SiN with moisture blocking capability
| Autor: | T. Kuwajima, Issei Ishizuka, Y. Miura, Koichi Ohto, Shoichi Hiroshima, Mikio Tanaka, Tomoyuki Nakamura, Kunihiro Fujii, M. Sakurai, Tatsuya Usami, Shinji Yokogawa, Chikako Kobayashi, Hiroyuki Kunishima, H. Tsuchiya |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Moisture Dielectric strength business.industry Nanotechnology Nitride Condensed Matter Physics Blocking (statistics) Electromigration Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Secondary ion mass spectrometry Reliability (semiconductor) X-ray photoelectron spectroscopy Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | Microelectronic Engineering. 112:97-102 |
| ISSN: | 0167-9317 |
| Popis: | We developed a highly reliable enhanced nitride Interface (ENI) process of barrier low-k using an ultra-thin SiN (UT-SiN) for 40-nm node devices and beyond. The UT-SiN (3nm) exhibits stable thickness uniformity and an excellent moisture blocking capability. By using this process, a lower effective k and high via yields were obtained. Compared to the conventional SiCN bi-layer process, 5x via electro-migration improvement, 50x time dependent dielectric breakdown improvement and no stress induced voiding failure within 1000h were observed. The ENI process was analyzed using X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry. From these analyses, we propose the mechanism for these reliability performance improvements. |
| Databáze: | OpenAIRE |
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