Comparative study of GaN layers grown on insulating AlN and conductive AlGaN buffer layers
| Autor: | H Lahrèche, Bernard Beaumont, M. Laügt, Pierre Gibart, P. Lorenzini, P. Vennéguès, M. Vaille |
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| Rok vydání: | 1999 |
| Předmět: |
Photoluminescence
Materials science business.industry Exciton Doping Mineralogy Condensed Matter Physics Electronic Optical and Magnetic Materials Full width at half maximum Electrical resistivity and conductivity Materials Chemistry Optoelectronics Metalorganic vapour phase epitaxy Electrical and Electronic Engineering business Luminescence Layer (electronics) |
| Zdroj: | Semiconductor Science and Technology. 14:L33-L36 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/14/11/102 |
| Popis: | The metal-organic vapour phase epitaxy (MOVPE) growth of GaN on 6H-SiC with a conductive AlGaN buffer layer has been studied. With only 6% Al incorporation, a continuous 200 nm thick AlGaN layer n-type doped in the 1018 cm-3 range was obtained. A crack-free 1.5 µm thick GaN layer was subsequently grown. The conductivity of the buffer was checked by I(V) measurements with Ni/Au contacts deposited on the back of SiC and on the GaN surface. The layer exhibits strong low temperature (10 K) band edge luminescence at 3.465 eV related to donor bound exciton with a ratio to deep level about 103 and an FWHM of 3.6 meV. Only threading dislocations are evidenced by TEM with a density of ~109 cm-2. The FWHM of the (0002) line of GaN in rocking curve scan by x-ray diffraction is 150 arc sec. These properties are similar to the ones of GaN layers deposited on an insulating AlN buffer layer. |
| Databáze: | OpenAIRE |
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